? semiconductor components industries, llc, 2010 july, 2010 ? rev. 0 1 publication order number: ndf11n50z/d ndf11n50z, ndP11N50Z n-channel power mosfet 500 v, 0.52 features ? low on resistance ? low gate charge ? 100% avalanche tested ? these devices are pb ? free and are rohs compliant absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol ndf11n50z ndP11N50Z unit drain ? to ? source voltage v dss 500 v continuous drain current, r jc i d 10.5 (note 2) 10.5 a continuous drain current t a = 100 c, r jc i d 6.7 (note 2) 6.7 a pulsed drain current, v gs @ 10 v i dm 42 (note 2) 42 a power dissipation, r jc (note 1) p d 36 145 w gate ? to ? source voltage v gs 30 v single pulse avalanche energy, i d = 10.5 a e as 190 mj esd (hbm) (jesd22 ? a114) v esd 4000 v rms isolation voltage (t = 0.3 sec., r.h. 30%, t a = 25 c) (figure 14) v iso 4500 v peak diode recovery dv/dt 4.5 (note 3) v/ns continuous source cur- rent (body diode) i s 10.5 a maximum temperature for soldering leads t l 260 c operating junction and storage temperature range t j , t stg ? 55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 sq. pad size, (cu area = 1.127 in sq [2 oz] including traces). 2. limited by maximum junction temperature 3. i d 10.5 a, di/dt 200 a/ s, v dd bv dss , t j 150 c. n ? channel marking diagram a = location code y = year ww = work week g = pb ? free package http://onsemi.com v dss r ds(on) (max) @ 4.5 a 500 v 0.52 ndf11n50zg or ndP11N50Zg ayww gate source drain to ? 220fp case 221d style 1 to ? 220 case 221a style 5 g (1) d (2) s (3) see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information free datasheet http://
ndf11n50z, ndP11N50Z http://onsemi.com 2 thermal resistance parameter symbol ndf11n50z ndP11N50Z unit junction ? to ? case (drain) r jc 3.4 0.9 c/w junction ? to ? ambient steady state (note 4) r ja 50 50 electrical characteristics (t j = 25 c unless otherwise noted) characteristic test conditions symbol min typ max unit off characteristics drain ? to ? source breakdown voltage v gs = 0 v, i d = 1 ma bv dss 500 v breakdown voltage temperature coefficient reference to 25 c, i d = 1 ma bv dss / t j 0.6 v/ c drain ? to ? source leakage current v ds = 500 v, v gs = 0 v 25 c i dss 1 a 125 c 50 gate ? to ? source forward leakage v gs = 20 v i gss 10 a on characteristics (note 5) static drain ? to ? source on ? resistance v gs = 10 v, i d = 4.5 a r ds(on) 0.48 0.52 gate threshold voltage v ds = v gs , i d = 100 a v gs(th) 3.0 4.5 v forward transconductance v ds = 15 v, i d = 4.5 a g fs 7.7 s dynamic characteristics input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz c iss 1375 pf output capacitance c oss 166 reverse transfer capacitance c rss 40 total gate charge v dd = 250 v, i d = 10.5 a, v gs = 10 v q g 46 nc gate ? to ? source charge q gs 8.7 gate ? to ? drain (?miller?) charge q gd 25 plateau voltage v gp 6.2 v gate resistance r g 1.4 resistive switching characteristics turn ? on delay time v dd = 250 v, i d = 10.5 a, v gs = 10 v, r g = 5 t d(on) 15 ns rise time t r 32 turn ? off delay time t d(off) 40 fall time t f 23 source ? drain diode characteristics (t c = 25 c unless otherwise noted) diode forward voltage i s = 10.5 a, v gs = 0 v v sd 1.6 v reverse recovery time v gs = 0 v, v dd = 30 v i s = 10.5 a, di/dt = 100 a/ s t rr 310 ns reverse recovery charge q rr 2.5 c 4. insertion mounted 5. pulse width 380 s, duty cycle 2%. free datasheet http://
ndf11n50z, ndP11N50Z http://onsemi.com 3 typical characteristics 0 5 10 15 20 25 0 5 10 15 20 25 v ds , drain ? to ? source voltage (v) i d , drain current (a) figure 1. on ? region characteristics 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v v gs = 10 v 0 5 10 15 20 25 345678910 v gs , gate ? to ? source voltage (v) i d , drain current (a) figure 2. transfer characteristics v ds = 25 v t j = 150 c t j = ? 55 c t j = 25 c 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) figure 3. on ? region versus gate ? to ? source voltage i d = 4.5 a t j = 25 c 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 01234567891011 t j = 25 c i d , drain current (a) figure 4. on ? resistance versus drain current and gate voltage r ds(on) , drain ? to ? source resistance ( ) v gs = 10 v 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 ? 50 ? 25 0 25 50 75 100 125 150 r ds(on) , drain ? to ? source resistance (normalized) i d = 4.5 a v gs = 10 v t j , junction temperature ( c) figure 5. on ? resistance variation with temperature 0.90 0.95 1.00 1.05 1.10 1.15 50 25 0 25 50 75 100 125 150 t j , junction temperature ( c) figure 6. bv dss variation with temperature bv dss , normalized breakdown voltage (v) i d = 1 ma free datasheet http://
ndf11n50z, ndP11N50Z http://onsemi.com 4 typical characteristics 0.1 1 10 100 0 50 100 150 200 250 300 350 400 450 500 v ds , drain ? to ? source voltage (v) i dss , leakage ( a) figure 7. drain ? to ? source leakage current versus voltage t j = 150 c t j = 125 c 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 0.01 0.1 1 10 100 v ds , drain ? to ? source voltage (v) c, capacitance (pf) figure 8. capacitance variation t j = 25 c v gs = 0 v f = 1 mhz c iss c oss c rss 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 5 10 15 20 25 30 35 40 45 50 q g , total gate charge (nc) figure 9. gate ? to ? source voltage and drain ? to ? source voltage versus total charge v gs , gate ? to ? source voltage (v) v ds , drain ? to ? source voltage (v) q gd v ds = 250 v i d = 10.5 a t j = 25 c v ds v gs q t q gs 1 10 100 1000 1 10 100 r g , gate resistance ( ) t, time (ns) v dd = 250 v i d = 10.5 a v gs = 10 v t d(off) t d(on) t f t r figure 10. resistive switching time variation versus gate resistance 0.1 1 10 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 125 c t j = 150 c 25 c ? 55 c v sd , source ? to ? drain voltage (v) figure 11. diode forward voltage versus current i s , source current (a) free datasheet http://
ndf11n50z, ndP11N50Z http://onsemi.com 5 typical characteristics 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain ? to ? source voltage (v) i d , drain current (a) figure 12. maximum rated forward biased safe operating area ndf11n50z v gs 30 v single pulse t c = 25 c 10 s 100 s 10 ms dc 1 ms r ds(on) limit thermal limit package limit 0.01 0.1 1 10 pulse time (s) duty cycle = 0.5 single pulse r(t) (c/w) figure 13. thermal impedance (junction ? to ? case) for ndf11n50z r jc = 3.4 c/w steady state 0.2 0.1 0.05 0.02 0.01 1e ? 06 1e ? 05 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 1e+02 1e+03 leads heatsink 0.110 min figure 14. isolation test diagram measurement made between leads and heatsink with all leads shorted together. *for additional mounting information, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. free datasheet http://
ndf11n50z, ndP11N50Z http://onsemi.com 6 ordering information order number package shipping ndf11n50zg to ? 220fp (pb ? free) 50 units / rail ndP11N50Zg to ? 220ab (pb ? free) 50 units / rail (in development) free datasheet http://
ndf11n50z, ndP11N50Z http://onsemi.com 7 package dimensions to ? 220fp case 221d ? 03 issue k style 1: pin 1. gate 2. drain 3. source dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 5: pin 1. gate 2. drain 3. source 4. drain dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actu al performance may vary over time. all operat- ing parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc d oes not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any c laim of personal injury or death associ- ated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufact ure of the part. scillc is an equal opportunity/ affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ndf11n50z/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative free datasheet http://
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